 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BYM99 Ultra fast low-loss controlled avalanche rectifier Product specification Supersedes data of June 1994 1996 Feb 19 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier FEATURES * Glass passivated * Low leakage current * Excellent stability * Guaranteed avalanche energy absorption capability * Available in ammo-pack * Also available with preformed leads for easy insertion. DESCRIPTION BYM99 Rugged glass SOD64 package, using a high temperature alloyed construction. 2/3 pagek (Datasheet) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) PARAMETER repetitive peak reverse voltage continuous reverse voltage average forward current , This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. a MAM104 Fig.1 Simplified outline (SOD64) and symbol. CONDITIONS MIN. - - MAX. 600 600 1.8 V V A UNIT Ttp = 50 C; lead length = 10 mm see Fig. 2; averaged over any 20 ms period; see also Fig 6 Tamb = 60 C; PCB mounting (see Fig.10); see Fig. 3; averaged over any 20 ms period; see also Fig. 6 - - 0.8 A IFRM IFSM repetitive peak forward current non-repetitive peak forward current Ttp = 50 C; see Fig. 4 Tamb = 60 C; see Fig. 5 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 mH; Tj = Tj max prior to surge; inductive load switched off - - - 15 7 40 A A A ERSM Tstg Tj non-repetitive peak reverse avalanche energy storage temperature junction temperature - -65 -65 10 +175 +150 mJ C C 1996 Feb 19 2 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF V(BR)R IR PARAMETER forward voltage reverse avalanche breakdown voltage reverse current CONDITIONS IF = 3 A; Tj = Tj max; see Fig. 7 IF = 3 A; see Fig. 7 IR = 0.1 mA VR = VRRMmax; see Fig. 8 VR = VRRMmax; Tj = 150 C; see Fig. 8 trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig. 12 f = 1 MHz; VR = 0 V; see Fig. 9 when switched from IF = 1 A to VR 30 V and dIF/dt = -1 A/s; see Fig.11 MIN. - - 700 - - - TYP. - - - - - - BYM99 MAX. 1.95 3.60 - 5 75 15 V V V UNIT A A ns Cd dI R -------dt diode capacitance maximum slope of reverse recovery current - - 135 - - 3 pF A/s THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig.10. For more information please refer to the "General Part of associated Handbook". PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length = 10 mm VALUE 25 75 UNIT K/W K/W 1996 Feb 19 3 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier GRAPHICAL DATA 2.4 MLB646 BYM99 handbook, halfpage handbook, halfpage I F(AV) (A) 1.8 lead length 10 mm 2.0 I F(AV) (A) 1.6 MLB647 1.2 1.2 0.8 0.6 0.4 0 0 100 T tp (o C) 200 0 0 100 T amb ( C) o 200 a = 1.42; VR = VRRMmax; = 0.5. Switched mode application. a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.10. Switched mode application. Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). handbook,16 pagewidth full MLB648 I FRM (A) 12 = 0.05 0.1 8 0.2 4 0.5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 Ttp = 50C; Rth j-tp = 25 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 600 V. Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Feb 19 4 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier BYM99 handbook, full pagewidth 8 MLB649 I FRM (A) 6 = 0.05 0.1 4 0.2 2 0.5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 Tamb = 60 C; Rth j-a = 75 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 600 V. Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MGC546 MLB645 handbook, halfpage 4 handbook, halfpage 8 P (W) 3 a=3 2.5 2 1.57 1.42 IF (A) 6 2 4 1 2 0 0 1 IF(AV) (A) 2 0 0 2 4 VF (V) 6 a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5. Dotted line: Tj = 150 C. Solid line: Tj = 25 C. Fig.6 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Fig.7 Forward current as a function of forward voltage; maximum values. 1996 Feb 19 5 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier BYM99 10 2 handbook, halfpage MGC547 10 2 handbook, halfpage MGC548 IR (A) Cd (pF) 10 1 0 100 Tj ( C) o 200 10 1 10 102 VR (V) 103 f = 1 MHz; Tj = 25 C. VR = VRRMmax. Fig.8 Reverse current as a function of junction temperature; maximum values. Fig.9 Diode capacitance as a function of reverse voltage; typical values. handbook, halfpage 50 25 IF ndbook, halfpage dI F 7 50 dt t rr 10% t dI R dt 2 IR 3 MGA200 100% MGC499 Dimensions in mm. Fig.10 Device mounted on a printed-circuit board. Fig.11 Reverse recovery definitions. 1996 Feb 19 6 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier BYM99 handbook, full pagewidth DUT + IF (A) 0.5 1 t rr 10 25 V 50 0 0.25 0.5 IR (A) 1 t MAM057 Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns. Source impedance: 50 ; tr 15 ns. Fig.12 Test circuit and reverse recovery time waveform and definition. 1996 Feb 19 7 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier PACKAGE OUTLINE BYM99 handbook, full pagewidth k 4.5 max 28 min Dimensions in mm. The marking band indicates the cathode. , 5.0 max a 1.35 max 28 min MBC049 Fig.13 SOD64. DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Feb 19 8 |
Price & Availability of BYM99
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |